NIEC PDT6016 IGBT Module

Features

Isolated Base

Dual Thyristors or Thyristor and Diode

Cascaded Circuit

High Surge Capability

UL Recognized,File No.E187184

TYPICAL APPLICATIONS

Rectified For General Use

Maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1600V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :60A

Collector current Icp 1ms Tc=25°C :120A

Collector power dissipation Pc:5W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 2.4~3.5 N·m