Mitsubishi PM100CSD060 IGBT Module

PM100CSD060 Description FEATURE

a) Adopting new 4th generation planar IGBT chip, which per-formance is improved by 1μm fine  rule process.

For example, typical VCE(sat)=1.7Vb)

b) Using new Diode which is designed to get soft reverserecovery characteristics.

c) Keeping the package compatibility.The layout/position of both terminal pin and mounting holeis same as S-series 3rd generation IPM.

•3φ 100A, 600V Current-sense IGBT for 15kHz switching

• Monolithic gate drive & protection logic

• Detection, protection & status indication Circuits for over-current, short-Circuit, over-temperature & under-voltage(P-Fo available from upper leg devices)

• Acoustic noise-less 11kW class inverter application

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic:100A

Collector current Icp:200A

Collector power dissipation Pc:328W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:-20~+150°C

Storage temperature Tstg :-40 to +125°C

Module Case Operating Temperature TC -20~+100°C

Mounting screw torque 3.5 *1 N·m

Weight 560g