Mitsubishi PM100CSD120 IGBT Module

PM100CSD120 Description

Intelligent Power Module

Target_Applications

PM100CSD120 could be used in Inverters, UPS, Motion/Sevo Control, Power Supplies

Power Driver Module IGBT 3 Phase 1200V 100A Module

FE ATUR E

a) Adopting new 4th generation planar IGBT chip: whith per-formance is improved B尹fine rule process.

b) Using new Diode which is designed to get soft revase recovery character1stics.

c) Keeping the package compatibility.

The 1ayout/position of both terminal pin and mountidg hole is same as S-series 3rd generation IPM .

●3 φ 100A. 1200V Current-sense IGBT for 15kHz switching

●Monolithic gate drive & protection 1ogic

●Detection, protection & status indication circuits for over-current. short-circuit. over-temperature & under-vo1thge

(P-Fo available from upper 1eg devices)

●Acoustic noise-1ess 18.5/22kW class inverter applicaton

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :100A

Collector current Icp 1ms Tc=25°C :200A

Collector power dissipation Pc:595W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-20 to +125°C

Mounting screw torque 2.5~3.5 N·m

Weight 920g