Mitsubishi PM100RLA060 IGBT Module

FEATURE

a) Adopting new 5th generation IGBT (CSTBT) chip, whichperformance is improved by 1μm fine rule process.For example, typical Vce(sat)=1.5V @Tj=125°C

b) I adopt the over-temperature conservation by Tj detection ofCSTBT chip, and error output is possible from all each con-servation upper and lower arm of IPM.

c) New small packageReduce the package size by 10%, thickness by 22% fromS-DASH series.

d) Current rating of brake part increased.50% for the current rating of inverter part.

•3φ 100A, 600V Current-sense IGBT type inverter

• 50A, 600V Current-sense regenerative brake IGBT

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage (P-Fo availablefrom upper arm devices)

• Acoustic noise-less 11kW class inverter application

Maximum ratings and characteristics(Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :100A

Collector current Icp 1ms Tc=25°C :200A

Collector power dissipation Pc:462W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 2.5~3.5 N·m

Weight 380 g