Mitsubishi PM100RSD120 IGBT Module

PM100RSD120 Description

FEATURE

a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

b) Using new Diode which is designed to get soft reverse

recovery characteristics.

c) Keeping the package compatibility.

The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM.

•3φ 100A, 1200V Current-sense IGBT for 15kHz switching

• 50A, 1200V Current-sense regenerative brake IGBT

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage

(P-Fo available from upper leg devices)

• Acoustic noise-less 18.5/22kW class inverter application

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts

Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts

Collector Current (DC, TC = 125°C)*2,*4 IC 100 Amperes

Collector Current (Pulse, Repetitive)*3 ICRM 200 Amperes

Total Power Dissipation (TC = 25°C)*2,*4 Ptot 595 Watts

Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) Visol 2500 Volts

Maximum Junction Temperature Tj(max) 175 °C

Maximum Case Temperature TC (max) 125 °C

Operating Junction Temperature Tj(op) -40 to +150 °C

Storage Temperature Tstg -40 to +125 °C