Mitsubishi PM100RSE120 IGBT Module

PM100RSE120 FEATURE

a) Adopting new 4th generation planar IGBT chip, which per-formance is improved by 1μm fine rule process.

b) Using  new  Diode  which  is  designed  to  get  soft  reverserecovery characteristics.

•3φ 100A, 1200V Current-sense IGBT for 15kHz switching

•  50A, 1200V Current-sense regenerative brake IGBT

•  Monolithic gate drive & protection logic

•  Detection, protection & status indication Circuits for over-current, short-Circuit, over-temperature & under-voltage

•  Acoustic noise-less 18.5/22kW class inverter application

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:100A

Collector current Icp:200A

Collector power dissipation Pc:595W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *1 N·m

Mitsubishi module 100A / 1200V

Related Post:  https://www.slw-ele.com/comparison-and-evaluation-of-mitsubishi-igbt-modules-pm100rse120-vs-pm100rse060.html