Mitsubishi PM150RLA120 IGBT Module

PM150RLA120 :Power Driver Module IGBT 3 Phase 1200V 150A Module

FEATURE

Inverter + Brake + Drive & Protection IC

a) Adopting new 5th generation Full-Gate CSTBTTM chip

b) The over-temperature protection which detects the chip sur-face temperature of CSTBTTM is adopted.

c)Error output signal is possible from all each protection up-per and lower arm of IPM.

d) Compatible L-series package.

•3φ150A, 1200V Current-sense and temperature senseIGBT type inverter

• Monolithic gate drive & protection logic

•Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage (P-FOavailablefrom upper arm devices)

MAXIMUM RATINGS(Tj= 25°C, unless otherwise noted)

INVERTER PART

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :150A

Collector current Icp 1ms Tc=25°C :300A

Collector power dissipation Pc:833W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-20 to +125°C

Mounting screw torque 2.5~3.5 N·m

Weight 800g