Mitsubishi PM150RSD060 IGBT Module

PM150RSD060 is module is designed for various power electronics applications. Here's an explanation of its features and specifications:

Features:

a) New 4th Generation Planar IGBT Chip: This module uses a 4th generation planar IGBT (Insulated Gate Bipolar Transistor) chip. This newer chip design is manufactured using a fine rule process, resulting in improved performance. For example, it specifies a typical VCE(sat) of 1.7V, which indicates a low voltage drop when the IGBT is in the "on" state.

b) New Diode with Soft Reverse Recovery Characteristics: The module incorporates a new diode with soft reverse recovery characteristics. This is important in power electronic applications as it helps to reduce switching noise and improve efficiency.

c) Package Compatibility: The module is designed to be compatible with its package, ensuring that the layout positions of both terminal pins and mounting holes are the same as the 3rd generation S-series IPM (Intelligent Power Module).

• 3φ 150A, 600V Current-Sense IGBT: The module features a 150A IGBT that can handle 600V for current-sensing applications. The "3φ" indicates it's suitable for three-phase systems.
• 50A, 600V Current-Sense Regenerative Brake IGBT: This IGBT is designed for regenerative brake applications, allowing the recovery of energy during braking in power electronic systems.
• Monolithic Gate Drive & Protection Logic: The module includes gate drive circuitry and protection logic integrated into a single package, making it more convenient for system designers.
• Detection, Protection, & Status Indication Circuits: The module provides circuits for detecting and protecting against over-current, short-circuit, over-temperature, and under-voltage conditions. It also offers status indication functions.
• Acoustic Noise-less 15/18.5kW Class Inverter Application: This module is suitable for use in inverter applications, particularly those requiring low acoustic noise and capable of handling power in the 15/18.5kW class.

Maximum Ratings and Characteristics:

• Collector-Emitter Voltage (Vces): 600V - This is the maximum voltage that can be applied across the collector and emitter terminals of the IGBT.
• Gate-Emitter Voltage (VGES): ±20V - This represents the maximum voltage range that can be applied across the gate and emitter terminals.
• Collector Current (Ic):

  • Continuous (Tc = 25°C): 150A - This is the maximum continuous current the module can handle under normal operating conditions.
  • 1ms Pulsed (Tc = 25°C): 300A - This is the maximum current allowed for short pulses (1ms).

• Collector Power Dissipation (Pc): 416W - This is the maximum power dissipation the module can handle without damage.
• Isolation Voltage (Visol): 3400V (AC, 1 Minute) - This indicates the isolation voltage between different parts of the module, which is important for safety and protection.
• Operating Junction Temperature (Tj): -20°C to +150°C - This is the temperature range within which the module can safely operate.
• Storage Temperature (Tstg): -40°C to +125°C - These are the recommended storage temperature limits for the module when it's not in use.
• Mounting Screw Torque: 2.5~3.5 N·m - These values indicate the recommended torque range for securing the module using mounting screws.
• Weight: 560g - This is the weight of the module.