Mitsubishi PM150RSE120 IGBT Module

PM150RSE120 Description

FEATURE

a) Adopting new 4th generation planar IGBT chip, which per-formance is improved by 1μm fine rule process.

b) Using new Diode which is designed to get soft reverserecovery characteristics.

•3φ 150A, 1200V Current-sense IGBT for 15kHz switching

• 50A, 1200V Current-sense regenerative brake IGBT

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for over-current, short-circuit, over-temperature & under-voltage

• Acoustic noise-less 30kW class inverter application

• UL RecognizedYellow Card No.E80276(N) File No.E80271

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)

VCES Collector-Emitter Voltage VD-15V,VCIN-15V 1200V

±lc Collector Current Tc-25C 150A

±ICP Collector Current (Peak) TC-25C 300A

PC Collector Dissipation TC-25C 781W

Tj Junction Temperature -20~+100°C

Tstg Storage Temperature -40~+125°C

Viso Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2500V

Mounting screw torque 2.5~3.5 N·m

Weight 920g