Mitsubishi PM200RSD060 IGBT Module

pm200rsd060 Description

Target Applications

FEATURE

a) Adopting new 4th generation planar IGBT chip, which per-formance is improved by 1cm fine rule process.For example, typical VCE(sat)=1.7V

b) Using new Diode which is designed to get soft reverse recovery characteristics.

C) Keeping the package compatibility.

The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM.

●3ρ 150A, 600V Current-sense IGBT for 15kHz switching

●75A, 600V Current-sense regenerative brake IGBT

●Monolithic gate drive & protection logic

●Detection, protection & status indication circuits for over-current, short-circuit, over-temperature & under-voltage

(P-Fo available from upper leg devices)

●Acoustic noise-less 15/18.5kW class inverter application

Absolute maximum ratings (Tc=25°C unless without specified)

• Collector-Emitter voltage Vces:600V
• Gate-Emitter voltage VGES:±20V
• Collector current Ic Continuous Tc=25°C :200A
• Collector current Icp 1ms Tc=25°C :400A
• Collector power dissipation Pc:595W
• Isolation Voltage VIsol (AC 1 minute) :2500V
• Operating junction temperature Tj:+150°C
• Storage temperature Tstg :-20 to +125°C
• Mounting screw torque 2.5~3.5 N·m
• Weight 920g