Mitsubishi PM300CLA120 IGBT Module

Feature . Adopting new 5th generation IGBT chip, which performance is improved by 1um fine rule process. For example, typical Vce(sat)-2.25V Tj=125°C . I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM. . Monolithic gate drive & protection logic . Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage(Fo availale from all arm devices) Maximum ratings and characteristics .Absolute maximum ratings (Tc=25°C unless without specified) Collector-Emitter voltage Vces:1200V Gate-Emitter voltage VGES:±20V Collector current Ic:300A Collector current Icp:600A Collector power dissipation Pc:1562W Collector-Emitter voltage VCES:2500V Operating junction temperature Tj:+150°C Storage temperature Tstg :-40 to +125°C Mounting M5 screw torque 2.5~3.5 N·m