MITSUBISHI PM300RL1A060 202G IGBT Module

FEATURE

Inverter + Brake + Drive & Protection IC

a) Adopting new 5th generation Full-Gate CSTBTTM chip

b) The over-temperature protection which detects the chip sur-face temperature of CSTBTTM is adopted.

c)Error output signal is possible from all each protection up-per and lower arm of IPM.

d) Compatible L-series package.

•3φ300A, 600V Current-sense and temperature senseIGBT type inverter

• Monolithic gate drive & protection logic

•Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage (P-FOavailablefrom upper arm devices)

MAXIMUM RATINGS(Tj = 25°C, unless otherwise noted)

INVERTER PART

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :300A

Collector current Icp 1ms Tc=25°C :600A

Collector power dissipation Pc:833W

Operating junction temperature Tj:-20~+150°C

BRAKE PART

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :150A

Collector current Icp 1ms Tc=25°C :300A

Collector power dissipation Pc:520W

Operating junction temperature Tj:-20~+150°C

TOTAL SYSTEM

Storage temperature Tstg :-40 to +125°C

Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min Viso 2500V

Mounting screw torque 2.5~3.5 N·m

Weight 800g