Mitsubishi PM30CNA060 IGBT Module

Mitsubishi PM30CNA060 is a power module, which is a type of semiconductor device designed for power electronics applications. Specifically, this power module is a type of insulated gate bipolar transistor (IGBT) module, which combines both the high-speed switching capability of MOSFETs and the low on-state power losses of bipolar transistors.

PM30CNA060 module is rated for voltage 600V & maximum current 30A, widely use in motor control, power supplies, and inverters. It consists of six IGBTs in a half-bridge configuration, along with freewheeling diodes and a built-in temperature sensor to help ensure safe and reliable operation.

PM30CNA060 Description

IGBT Power Transistor Module, 30 Amp, 600 Volt.

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic:30A

Collector current Icp:60A

Collector power dissipation Pc:83W

Isolation Voltage 60Hz, SinusoidalCharged part to Base, AC 1 min:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *1 N·m