#Mitsubishi, #PM450CG1C065, #IGBT_Module, #IGBT, MISUBISHI High power switching use insulated type VCES 650V / 450 A
Mitsubishi PM450CG1C065 is a power module designed and manufactured by Mitsubishi Electric Corporation. It is a high-power insulated-gate bipolar transistor (IGBT) module that is commonly used in power conversion systems, motor control applications, and other high-power electronics applications.
PM450CG1C065 is rated for 650 volts & can handle up to 450 amperes of current. The module(PM450CG1C065) has built-in protection features such as short-circuit protection, over-current protection, and over-temperature protection.
PM450CG1C065 FEATURE
a) Adopting Full-Gate CSTBTTM chip.
b) The over-temperature protection which detects the chip surface temperature of CSTBTTM is adopted.
c) Error output signal is available from each protection upper and lower arm of IPM.
d) Outputting an error signal corresponding to the abnormal state (error mode identification)
Collector-Emitter Voltage VD=15 V, VCIN=15 V VCES:650 V
Collector Current TC=25 °C IC:450A
Collector Current Pulse ICRM: 675 A
Total Power Dissipation TC=25 °C Ptot: 1388 W
Emitter Current TC=25 °C IE: 450A
(Free-wheeling Diode Forward current) Pulse IERM: 675 A
Junction Temperature (Note5) Tvj: -20 ~ +150 °C
Isolation Voltage 60Hz, Sinusoidal, Charged part to Base plate, AC 1min, RMS Visol: 2500V