Hitachi PM45502C IGBT Module

#PM45502C Hitachi power module

Target_Applications: High Speed Power Switching

Features Absolute Maxinun Ratings((Tc=25°C)(Per FET chip)

Drain source voltage 450 V

Gate source voltage ±20 V

Drain current ID 50 A

Drain peak current ID(peak) 100 A

Chammel disssipation 300 W

Channel temperature Tch 150 °C

Storage temperature Tstg -45~125 °C

Insulation dielectric Visol*2 2000 V

Hitachi IGBT Module 2MOS: 50A / 300V /450V