Hitachi PM50502C IGBT Module

PM50502C Description

Silicon N-Channel power MOSFET module. High speed power switching, 50 A, 500 V.

Features

. Equipped with Power MOS FET

. Low On-Resistance

. High Speed Switching

. Low Drive Current

. Wide Area of Safe Operation

. Inherent Parallel Diod between Source and Drain

.Isolated Base from Terminal

. Suitable for Motor Driver, Switching Regulator and etc.

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:500V

Gate-Emitter voltage VGES:±20V

Collector current Ic:50A

Collector current Icp:100A

Collector power dissipation Pc:300W

Collector-Emitter voltage VCES:2000V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C