Mitsubishi PM50CL1B120 IGBT Module

FEATURE

Inverter + Drive & Protection IC

a) Adopting new 5th generation Full-Gate CSTBT TM chip

b) The over-temperature protection which detects the chip sur- face temperature of CSTBT TM is adopted.

c) Error output signal is possible from all each protection up- per and lower arm of IPM.

d) Compatible L-series package.

•3φ 50A, 1200V Current-sense and temperature sense IGBT type inverter

• Monolithic gate drive & protection logic

•Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage (P-F

O available from upper arm devices)

• UL Recognized

Maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :50A

Collector current Icp 1ms Tc=25°C :100A

Collector power dissipation Pc:462W

Isolation Voltage VIsol (AC 1 minute) :3400V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-20 to +150°C

Mounting screw torque 2.5~3.5 N·m

Weight 340g