Mitsubishi PM50CLB060 IGBT Module

FEATURE

a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process.

For example, typical Vce(sat)=1.5V @Tj=125°C

b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM.

c) New small package

Reduce the package size by 10%, thickness by 22% from S-DASH series.

• 3φ 50A, 600V Current-sense IGBT type inverter

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices)

• Acoustic noise-less 3.7kW class inverter application

MAXIMUM RATINGS(Tj = 25°C, unless otherwise noted)

• VCES Collector- Emitter Voltage VD= 15V, VCIN= 15V 600 V
• ±IC Collector Current TC= 25°C 50 A
• ±ICP Collector Current (Peak) TC= 25°C . 100 A
• PC Collector Dissipation TC= 25°C  101 W
• Tj Junction Temperature - -20~ +150°C
• VCC(PROT) Supply Voltage Protected by SC VD= 13.5~ 16.5V, Inverter Part,Tj= +125°C Start 400V
• VCC(surge) Supply Voltage (Surge) Applied between : P-N, Surge value 500V
• TC Module Case Operating (Note-1) Temperature -20~ +100°C
• Tstg Storage' Temperature - 40~ +125°C
• Viso lsolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2500Vrms