Mitsubishi PM50CS1D060 IGBT Module

Datasheet PM50CS1D060

FEATURE

Inverter + Drive & Protection IC

 • 3 phase 50A/600V CSTBTTM

(The Current senser and the thermal senser with a build-in CSTBTTM.)

 • Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic:50A

Collector current Icp:100A

Collector power dissipation Pc:320W

Collector-Emitter voltage VCES:600V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *1 N·m

Mitsubishi IGBT PM50CS1D060 50A/600V CSTBTTM