Mitsubishi PM50CSD060 IGBT Module

PM50CSD060 Product details

FEATURE

a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

For example, typical VCE(sat)=1.7V

b) Using new Diode which is designed to get soft reverse recovery characteristics.

c) Keeping the package compatibility.

The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM.

• 3φ 50A, 600V Current-sense IGBT for 15kHz switching

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage

(P-Fo available from upper leg devices)

• Acoustic noise-less 3.7kW class inverter application

• UL Recognized Yellow Card No.E80276(N)

File No.E80271

Maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :50A

Collector current Icp 1ms Tc=25°C :100A

Collector power dissipation Pc:125W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:-20~+100°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 2.5~3.5 N·m

Weight 560g