Mitsubishi PM50CSE120 IGBT Module

#PM50CSE120 FEATURE

a) Adopting new 4th generation planar IGBT chip, which per-formance is improved by 1μm fine rule process.b) Using  new  Diode  which  is  designed  to  get  soft  reverserecovery characteristics.

•3φ 50A, 1200V Current-sense IGBT for 15kHz switching

•  Monolithic gate drive & protection logic

•  Detection, protection & status indication circuits for over-current, short-circuit, over-temperature & under-voltage

•  Acoustic noise-less 5.5/7.5kW class inverter application

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:50A

Collector current Icp:100A

Collector power dissipation Pc:328W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *1 N·m

IGBT Module Dual 100A /1000V