Mitsubishi PM75CL1A120 IGBT Module

Mitsubishi #PM75CL1A120  FEATURE

Inverter + Drive & Protection IC

a) Adopting new 5th generation Full-Gate CSTBT(TM) chip

b) The over-temperature protection which detects the chip sur-face temperature of CSTBT(TM) is adopted.

c) Error output signal is possible from all each protection up-per and lower arm of IPM.

d) Compatible L-series package.

• 3φ 75A, 1200V Current-sense and temperature sense IGBT type inverter

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage (P-FO available

from upper arm devices)

• UL Recognized

Maximum ratings and characteristics

• Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:75A

Collector current Icp:150A

Collector power dissipation Pc:595W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting M5 screw torque 2.5~3.5 N·m

Weight Typical value 380g