Mitsubishi PM75CL1B060 IGBT Module

FEATURE

Inverter + Drive & Protection IC

a) Adopting new 5th generation Full-Gate CSTBTTM chip

b) The over-temperature protection which detects the chip surface temperature of CSTBTTM is adopted.

c) Error output signal is possible from all each protection upper and lower arm of IPM.

d) Compatible L-series package.

• 3φ 75A, 600V Current-sense and temperature sense

IGBT type inverter

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-FO available

from upper arm devices)

Collector-Emitter Voltage VD = 15V, VCIN = 15V VCES 600V

Collector Current TC = 25°C IC 75A

Collector Current (Peak) TC = 25°C ICP 150A

Collector Dissipation TC = 25°C Pc 337W

Junction Temperature Tj –20 ~ +150°C

Storage Temperature Tstg –40 ~ +125 °C

Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min. Viso 2500V

Weight 380g