Mitsubishi PM75CLB120 IGBT Module

FEATURE

a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1xm fine rule process.For example, typical Vce(sat)=1 .9V @Tj=125°C

b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each con-

servation upper and lower arm of IPM.

c) New small package

Reduce the package size by 32%, thickness by 22% from S-DASH series.

●3φ 75A, 1200V Current-sense IGBT type inverter

●Monolithic gate drive & protection logic

●Detection, protection & status indication circuits for, short- circuit, over-temperature & under-voltage (P-Fo available

from upper arm devices)

●Acoustic noise-less 11kW/1 5kW class inverter application

Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :75A

Collector current Icp 1ms Tc=25°C :150A

Collector power dissipation Pc:595W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 2.5~3.5 N·m

Weight 340 g