Mitsubishi PM75CSE120 IGBT Module

Mitsubishi #PM75CSE120 FEATURE

a) Adopting new 4th generation planar IGBT chip, which per-formance is improved by 1μm fine rule process.

b) Using new Diode which is designed to get soft reverserecovery characteristics.

•3φ 75A, 1200V Current-sense IGBT for 15kHz switching

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for over-current, short-circuit, over-temperature & under-voltage

• Acoustic noise-less 11/15kW class inverter application

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:75A

Collector current Icp:150A

Collector power dissipation Pc:416W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting M5 screw torque 2.5~3.5 N·m

Weight Typical value 560g