Mitsubishi PS11016 IGBT Module

INTEGRATED FUNCTIONS AND FEATURES

• 3-phase IGBT inverter bridge configured by the latest 3rd.generation IGBT and diode technologies.

• Circuit for dynamic braking of motor regenerative energy

INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS:

• For P-Side IGBTs : Drive circuit, High voltage isolated high-speed level shifting, Short-circuit protection (SC),

Bootstrap circuit supply scheme (Single drive-power-supply) and Under voltage protection (UV).

• For N-Side IGBTs : Drive circuit, Short circuit protection (SC), Control-supply Under voltage and Over voltage protection (OV/

UV), System Over-temperature protection (OT), Fault output (FO) signaling circuit, and Current-Limit warning signal output(CL)

• For Brake circuit IGBT : Drive circuit

• Warning and Fault signaling :

FO1: Short circuit protection for lower-leg IGBTs and Input interlocking against spurious arm shoot-through.

FO2: N-side control supply abnormality locking (OV/UV)

FO3: System over-temperature protection (OT).

CL : Warning for inverter current overload condition

• For system feedback control : Analogue signal feedback reproducing actual inverter phase current (3φ).

• Input Interface : 5V CMOS/TTL compatible, Schmitt trigger input, and Arm-Shoot-Through interlock protection

MAXIMUM RATINGS(Tj = 25°C) INVERTER PART (Including Brake Part)

Vcc Supply voltage Applied between P-N 450V

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :15A

Collector current Icp 1ms Tc=25°C :30A

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 0.78~1.27 N·m