SanRex QF30AA60 IGBT Module

QF30AA40 is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction.

. IC 30A, VCEX 400/600V

. Low saturation voltage for higher efficiency.

. High DC current gain hFE

. Isolated mounting base

. VEBO 10V for faster switching speed.

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:400V

Gate-Emitter voltage VGES:±20V

Collector current Ic:30A

Collector current Icp:60A

Collector power dissipation Pc:250W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting M5 screw torque 2.7 N·m

Weight Typical value 400g