#Mitsubishi, #QM100DY_2HBK, #IGBT_Module, #IGBT, QM100DY-2HBK Mitsubishi IGBT Module 100A 1000V high power switching useinsulated type ;
QM100DY-2HBK
Features
· Low VCE(sat)
· Compact package
· P.C. board mount
· Converter diode bridge, Dynamic brake Circuit
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:100A
Collector current Icp:200A
Collector power dissipation Pc:800W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+750 °C
unction temperatur -40~150 °C
Storage temperature Tstg :-40 to +125 °C
Mounting screw torque 1.96~2.94 *1 N·m
Mitsubishi IGBT Module 100A 1000V high power switching useinsulated type