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Mitsubishi QM100HY-H IGBT Module

#Mitsubishi, #QM100HY_H, #IGBT_Module, #IGBT, QM100HY-H Mitsubishi High power wsitching use transistor module 100A/600V/GTR/1U;

· Categories: IGBT Module
· Manufacturer: Mitsubishi
· Price: US$ 31
· Date Code: 2024+
. Available Qty: 400
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QM100HY-H Specification

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QM100HY-H Product details

HIGH POWER SWITCHING USE INSULATED TYPE

• IC Collector current ........................ 100A

• VCEX Collector-emitter voltage ........... 600V

• hFE DC current gain............................... 75

• Insulated Type

• UL Recognized

Yellow Card No. E80276 (N) File No. E80271

APPLICATION

Inverters, Servo drives, DC motor controllers, NC equipment, Welders

Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :100A

Collector current Icp 1ms Tc=25°C :200A

Collector power dissipation Pc:620W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque M5 1.47~1.96 N·m

Weight Typical value 250g

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