#Mitsubishi, #QM100HY_H, #IGBT_Module, #IGBT, QM100HY-H Mitsubishi High power wsitching use transistor module 100A/600V/GTR/1U;
QM100HY-H Product details
HIGH POWER SWITCHING USE INSULATED TYPE
• IC Collector current ........................ 100A
• VCEX Collector-emitter voltage ........... 600V
• hFE DC current gain............................... 75
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N) File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :100A
Collector current Icp 1ms Tc=25°C :200A
Collector power dissipation Pc:620W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque M5 1.47~1.96 N·m
Weight Typical value 250g