#Mitsubishi, #QM150DY_24, #IGBT_Module, #IGBT, QM150DY-24 Power Bipolar Transistor, 150A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 15 Pin
Manufacturer Part Number: QM150DY-24
Package Description: FLANGE MOUNT, R-PUFM-X15
Manufacturer: Mitsubishi Electric
Collector Current-Max (IC): 150 A
Configuration: COMPLEX
DC Current Gain-Min (hFE): 75
Fall Time-Max (tf): 3000 ns
JESD-30 Code: R-PUFM-X15
Number of Elements: 2
Number of Terminals: 15
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: NPN
Power Dissipation-Max (Abs): 1000 W
Qualification Status: Not Qualified
Subcategory: BIP General Purpose Power
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Element Material: SILICON
VCEsat-Max: 3 V
Power Bipolar Transistor, 150A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 15 Pin