Mitsubishi QM150DY-HK IGBT Module

QM150DY-HK Description

IGBT Power Transistor Modules 150A/600V/GTR/2U QM150DY-HK

• IC Collector current ........................ 100A

• VCEX Collector-emitter voltage ........... 1200V

• hFE DC current gain............................... 75

• Insulated Type

• UL Recognized

• Isolation voltage Charged part to case, AC for 1 minute 2500V

• Collector dissipation TC=25°C........ 800W

• Junction temperature Tj ...................+150°C

• Storage temperature Tstg..............-40 to +125°C

• Mounting screw torque ....................3.0 *1 N·m

• Typical value Weight .....................470g

Mitsubishi Power Transistor ModuleS HIGH POWER SWITCHING USE INSULATED TYPE 100 Amp 1200 Vol