Mitsubishi QM300HC-M IGBT Module

Mitsubishi QM300HC-M is a high-power module for industrial use. It is a power transistor module designed to operate in high-frequency switching applications. The QM300HC-M has a collector current rating 300A, collector-emitter voltage rating 3300V, & maximum power dissipation 1800W.

QM300HC-M module uses Mitsubishi's advanced Insulated Gate Bipolar Transistor (IGBT) technology, provides high-speed switching & high voltage blocking capabilities. The QM300HC-M features built-in temperature sensor that allows for temperature monitoring and thermal protection.

QM300HC-M module is commonly used in power supplies, motor drives, welding equipment, & renewable energy systems.

Mitsubishi QM300HC-M IGBT module has the following absolute maximum ratings (at a temperature of 25°C unless specified otherwise):

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:350V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=80°C :300A

Collector current Icp 1ms Tc=80°C :600A

Collector power dissipation Pc:1250W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Weight: 420g