Mitsubishi QM50DY-H IGBT Module

QM50DY-H Description

Manufactured by Mitsubishi, QM50DY-H is a medium power switching use, insulated type module . with a collector emitter voltage of 600V and a collector current amount of 50A.

This device has an exceptional ability to sustain full functionality for a long period of time. Its superb layout construction and high quality insulation is well-designed to withstand heat caused by chronic or heavy operations. 

QM50DY-H’s highly sophisticated components have been tested and proven by experts for years. Indeed, Mitsubishi’s specialists designed this device to become an efficient and durable power transistor module. The benefits in using QM50DY-H include high-efficiency, extraordinary durability, and cost-effectiveness.

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic:50A

Collector power dissipation Pc:310W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw M6 1.96 to 2.94 N·m

Weight Typical value 210g