#Mitsubishi, #QM50TX_H, #IGBT_Module, #IGBT, QM50TX-H 6GTR 50A500V; QM50TX-H
QM50TX-H Description
QM50TX-H is a medium power switching use, and insulated type power transistor module that is considered as one of the best Mitsubishi power transistor products nowadays. Weighing a light weight of 0.93 lbs., it can produce a collector current of 50 amperes and a collector voltage of 600 volts.
• IC Collector current .......................... 50A
• VCEX Collector-emitter voltage ........... 600V
• hFE DC current gain............................... 75
VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600V
VCEX Collector-emitter voltage VEB=2V 600V
VCBO Collector-base voltage Emitter open 600V
VEBO Emitter-base voltage Collector open 7V
IC Collector current DC 50A
–IC Collector reverse current DC (forward diode current) 50A
PC Collector dissipation TC=25°C 310W
Tj Junction temperature -40~+150°C
Tstg Storage temperature -40 ~ +125°C
Viso Isolation voltage Charged part to case, AC for 1 minute 2500V
6GTR 50A500V