Mitsubishi QM75DY-2H IGBT Module

QM75DY-2H Product details

HIGH POWER SWITCHING USE INSULATED TYPE

• IC Collector current .......................... 75A

• VCEX Collector-emitter voltage ......... 1000V

• hFE DC current gain............................... 75

• Insulated Type

• VCBO: Collector-base voltage with the emitter open. Rated at 1000V.
• IC: Collector current (DC) rated at 75A.
• PC: Collector dissipation at 25°C, rated at 500W.
• IB: Base current (DC) rated at 4A.
• ICSM: Surge collector reverse current value for one cycle of 60Hz (half-wave), rated at 750A.
• Tj: Junction temperature range from -40°C to +150°C.
• Tstg: Storage temperature range from -40°C to +125°C.
• Viso: Isolation voltage, charged part to case, AC for 1 minute, rated at 2500V.
• Mounting: Specifications for terminal screws M5 and M6, including torque values.
• Weight: Typical weight rated at 250 grams.