Mitsubishi QM75DY-H IGBT Module

• IC Collector current .......................... 75A

• VCEX Collector-emitter voltage ......... 1000V

• hFE DC current gain............................... 75

ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)

Collector-emitter voltage 1000V

Collector-base voltage 1000V

Emitter-base voltage 7V

Collector current 75A

Collector reverse current 75A

Collector dissipation 500W

Base current 4A

Surge collector reverse current 750A

Junction temperature –40~+150℃

Storage temperature –40~+125℃

Isolation voltage 2500V

Mitsubishi 75A/1000V/GTR/2U Transistor Modules High Power Switching Use Insulated Type.