#Rohm Semiconductor, #R6046FNZC8, #IGBT_Module, #IGBT, R6046FNZC8 Power Field-Effect Transistor, 46A I(D), 600V, 0.093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semicondu
Manufacturer Part Number: R6046FNZC8Rohs Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: Rohm CO LTDPackage Description: FLANGE MOUNT, R-PSFM-T3Manufacturer: Rohm SemiconductorRisk Rank: 8.51Avalanche Energy Rating (Eas): 142 mJCase Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 600 VDrain Current-Max (ID): 46 ADrain-source On Resistance-Max: 0.093 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PSFM-T3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 115 ASurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Field-Effect Transistor, 46A I(D), 600V, 0.093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-3PF, 3 PIN