#MITSUBISHI, #RM15TB_H, #IGBT_Module, #IGBT, RM15TB-H Bridge Rectifier Diode, 3 Phase, 30A, 800V V(RRM), Silicon, MODULE-5;
ABSOLUTE MAXIMUM RATINGS
Repetitive Peak Reverse Voltage (VRRM): 800V
Non-Repetitive Peak Reverse Voltage (VRSM): 900V
DC Output Current (IC) in a Three-Phase Full-Wave Rectifying Circuit at TC=103°C: 30A
Surge (Non-Repetitive) Forward Current (IFSM): 400A - This is the peak forward current that the diode module can handle for a non-repetitive surge condition, which lasts for one-half cycle at 60Hz.
Junction Temperature (Tj): -40°C to +150°C
Storage Temperature (Tstg): -40°C to +125°C
Isolation Voltage (Viso) - Charged Part to Case: 2500V
Mounting Torque (Mounting Screw M6): 2.0 to 3.0 N·m
Weight (Typical Value): 120g