Samsung announces that 14nm EUV DDR5 DRAM is officially mass-produced

October 12th news,SamsungAnnounced the start of mass production of 14nm DRAM based on extreme ultraviolet (EUV) technology. After Samsung launched its first EUV DRAM in March last year, it has increased the number of EUV layers to 5 to provide its DDR5 solutions with current higher-quality and advanced DRAM technology.

According to Jooyoung Lee, senior vice president and head of DRAM products and technology at Samsung Electronics,“Through the development of key patterning technology, Samsung has been active in the global DRAM market for nearly 30 years. Today, Samsung is using multilayer EUV technology to set a new technological milestone and achieve a more miniaturized 14nm process. This is also impossible with the traditional ArF process. On this basis, Samsung will continue to provide highly differentiatedRAMSolutions that fully meet 5G,artificial intelligenceThe data-driven era such as Heyuan Universe demands higher performance and larger capacity. “

As the DRAM process continues to shrink to the 10nm range, EUV technology becomes more and more important because it can improve pattern accuracy, resulting in higher performance and greater yield. By applying 5 EUV layers in 14nm DRAM, Samsung has achieved its own highest unit capacity, and at the same time, the overall wafer productivity has increased by about 20%. In addition, compared with the previous generation of DRAM technology, the 14nm process can help reduce power consumption by nearly 20%.

According to the latest DDR5 standard, Samsung’s 14nm DRAM will help release speeds that were not available in previous products: up to 7.2Gbps, more than twice as fast as DDR4’s 3.2Gbps.

Samsung plans to expand its 14nm DDR5 product portfolio to support data centers, supercomputerAnd enterprise server applications. In addition, Samsung expects to increase its 14nm DRAM chip capacity to 24Gb to better meet the rapidly growing data needs of global IT systems.

It’s worth noting that in January this year,Micron announcedMass production of 10nm-class 4th generation (1a) DRAM was successful, and SK Hynix also began mass production of EUV-based 1a DRAM in July. Although they did not specify specific numbers, the industry regards both SK Hynix and Micron as 14nm-class DRAM. Micron did not apply EUV, while SK Hynix only applied EUV on the first floor.

Although Samsung Electronics is a bit late in mass production, it has gained an advantage in the future DRAM competition by widening the technological gap. In particular, based on the 14nm process and high-maturity EUV process technology, achieving differentiated performance and stable yield is a strategy leading the popularization of DDR5DRAM.