#ON Semiconductor, #SB80W10T_H, #IGBT_Module, #IGBT, SB80W10T-H Schottky Barrier Diode, 100V, 8A, Low IR, Monolithic Dual TP Common Cathode, DPAK / TP-FA, 500-BLKBG; SB80W10
Manufacturer Part Number: SB80W10T-HBrand Name: ON SemiconductorPbfree Code: ObsoleteIhs Manufacturer: ON SEMICONDUCTORPackage Description: R-PSIP-T3Pin Count: 3Manufacturer Package Code: 369AJECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 5.5Application: GENERAL PURPOSECase Connection: CATHODEConfiguration: COMMON CATHODE, 2 ELEMENTSDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 0.8 VJEDEC-95 Code: TO-251JESD-30 Code: R-PSIP-T3Non-rep Pk Forward Current-Max: 40 ANumber of Elements: 2Number of Phases: 1Number of Terminals: 3Operating Temperature-Max: 150 °COperating Temperature-Min: -55 °COutput Current-Max: 4 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINERep Pk Reverse Voltage-Max: 100 VReverse Current-Max: 100 µASubcategory: Rectifier DiodesSurface Mount: NOTechnology: SCHOTTKYTerminal Form: THROUGH-HOLETerminal Position: SINGLE Schottky Barrier Diode, 100V, 8A, Low IR, Monolithic Dual TP Common Cathode, DPAK / TP-FA, 500-BLKBG