#ON Semiconductor, #SB80W10T_TL_H, #IGBT_Module, #IGBT, SB80W10T-TL-H Schottky Barrier Diode, 100V, 8A, Low IR, Monolithic Dual TP Common Cathode, DPAK / TP-FA, 700-REEL; SB80W
Manufacturer Part Number: SB80W10T-TL-HBrand Name: ON SemiconductorPbfree Code: Not RecommendedIhs Manufacturer: ON SEMICONDUCTORPackage Description: R-PSSO-G2Pin Count: 3Manufacturer Package Code: 369AHECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 7.48Application: GENERAL PURPOSECase Connection: CATHODEConfiguration: COMMON CATHODE, 2 ELEMENTSDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 0.8 VJEDEC-95 Code: TO-252JESD-30 Code: R-PSSO-G2JESD-609 Code: e6Moisture Sensitivity Level: 1Non-rep Pk Forward Current-Max: 40 ANumber of Elements: 2Number of Phases: 1Number of Terminals: 2Operating Temperature-Max: 150 °COperating Temperature-Min: -55 °COutput Current-Max: 4 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINERep Pk Reverse Voltage-Max: 100 VReverse Current-Max: 100 µASubcategory: Rectifier DiodesSurface Mount: YESTechnology: SCHOTTKYTerminal Finish: Tin/Bismuth (Sn/Bi)Terminal Form: GULL WINGTerminal Position: SINGLE Schottky Barrier Diode, 100V, 8A, Low IR, Monolithic Dual TP Common Cathode, DPAK / TP-FA, 700-REEL