Name: SEMIX151GB12E4V4 - IGBT Module by Semikron
Brand: Semikron
SKU: SEMIX151GB12E4V4
Price: 85 USD
Availability: InStock

SEMIX151GB12E4V4 Features:

Homogeneous Si: This suggests that the module uses silicon (Si) as the semiconductor material, which is common in power electronic devices.

Trenchgate Technology: The module incorporates trenchgate technology, which is a design approach used to improve the switching performance and efficiency of power devices.

VCE(sat) with Positive Temperature Coefficient: VCE(sat) refers to the collector-emitter saturation voltage, and a positive temperature coefficient means that the saturation voltage increases with temperature. This is important to ensure stable performance under varying operating conditions.

High Short Circuit Capability: The module is designed to handle high short-circuit currents, making it suitable for applications where short circuits can occur.

UL Recognized File No. E63532: This indicates that the module is recognized by Underwriters Laboratories (UL) and has been assigned a file number, which is relevant for safety and regulatory compliance.

Typical Applications:

AC Inverter Drives: The module is suitable for use in AC inverter drives, which are commonly used in motor control and variable frequency drive (VFD) applications.

Uninterruptible Power Supplies (UPS): It can be used in UPS systems, which provide backup power in case of a mains power failure.

Electronic Welding: The module may be used in electronic welding equipment, where high-power switching and control are necessary for welding operations.

Remarks:

Case Temperature Limited to Tc=125°C Max: The maximum allowed case temperature for the module is 125°C. Operating the module beyond this temperature may affect its performance and reliability.

Product Reliability Results Are Valid for Tj=150°C: The module's reliability results have been verified at an operating junction temperature of 150°C, which is the maximum safe operating temperature.

Maximum Ratings and Characteristics:

Collector-Emitter Voltage (Vces): 1200V - This is the maximum voltage that can be applied across the collector and emitter terminals of the module.

Gate-Emitter Voltage (VGES): ±20V - This represents the maximum voltage range that can be applied across the gate and emitter terminals.

Collector Current (Ic):

Continuous (Tc = 25°C): 150A - This is the maximum continuous current the module can handle under normal operating conditions.

1ms Pulsed (Tc = 25°C): 450A - This is the maximum current allowed for short pulses (1ms).

Collector Power Dissipation (Pc): 310W - This is the maximum power dissipation the module can handle without damage.

Isolation Voltage (Visol): 4000V (AC, 1 Minute) - This indicates the isolation voltage between different parts of the module, which is important for safety and protection.

Operating Junction Temperature (Tj): +150°C - This is the maximum temperature at which the module can safely operate.

Storage Temperature (Tstg): -40°C to +175°C - These are the recommended storage temperature limits for the module when it's not in use.

Mounting Screw Torque: 2.5~5 N·m - These values indicate the recommended torque range for securing the module using mounting screws.

Weight: 145g - This is the weight of the module.

Shunlongwei Co. ltd.

Semikron SEMIX151GB12E4V4 IGBT Module

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SEMIX151GB12E4V4 Specification

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