#SEMIKRON, #SEMIX201GD066HDS, #IGBT_Module, #IGBT, SEMIX201GD066HDS Insulated Gate Bipolar Transistor, 259A I(C), 600V V(BR)CES, N-Channel, SEMIX 13, 20 PIN; SEMIX201GD066
Manufacturer Part Number: SEMIX201GD066HDSPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Semikron INTERNATIONALPackage Description: FLANGE MOUNT, R-XUFM-X20Pin Count: 20Manufacturer: SemikronRisk Rank: 5.7Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 259 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X20JESD-609 Code: e3/e4Number of Elements: 6Number of Terminals: 20Operating Temperature-Max: 175 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedReference Standard: IEC-60747-1Subcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN/SILVERTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 259A I(C), 600V V(BR)CES, N-Channel, SEMIX 13, 20 PIN