Semikron SEMiX353GB126V1 IGBT Module

#SEMiX353GB126V1 Features*

• Homogeneous Si

• Trench = Trenchgate technology

• VCE(sat) with positive temperature

coefficient

• High short Circuit capability

• Press-fit pins as auxiliary contacts

• Thermally optimized ceramic

Typical Applications

• AC inverter drives

• UPS

• Renewable energy systems

Remarks

• Product reliability results are valid for Tj=150°C

• Visol between temperature sensor and power section is only 2500V

• For storage and case temperature with TIM see document “TP(*) SEMiX 3p”

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:500A

Collector current Icp:1000A

Collector power dissipation Pc:3900W

Collector-Emitter voltage VCES:4000V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *1 N·m

Weight 350g