Semikron SEMIX453GB12E4S IGBT Module

SEMIX453GB12E4S Features

•  Homogeneous Si

•  Trench = Trenchgate technology

•VCE(sat) with positive temperature coefficient

•  High short circuit capability

•  UL recognised file no. E63532Typical Applications*

•  AC inverter drives

• UPS

•  electronic Welding

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:450A

Collector current Icp:900A

Collector power dissipation Pc:2700W

Collector-Emitter voltage VCES:4000V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *1 N·m

Weight 300g