#SEMIKRON, #SEMIX703GB126HDS, #IGBT_Module, #IGBT, SEMIX703GB126HDS Insulated Gate Bipolar Transistor, 650A I(C), 1200V V(BR)CES, N-Channel, CASE SEMIX 3S, 18 PIN; SEMIX70
Manufacturer Part Number: SEMIX703GB126HDSPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Semikron INTERNATIONALPackage Description: FLANGE MOUNT, R-XUFM-X18Pin Count: 18Manufacturer Package Code: CASE SEMIX 3SECCN Code: EAR99Manufacturer: SemikronRisk Rank: 5.65Case Connection: ISOLATEDCollector Current-Max (IC): 650 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X18JESD-609 Code: e3/e4Number of Elements: 2Number of Terminals: 18Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedReference Standard: IEC-60747-1Subcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN/SILVERTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 650A I(C), 1200V V(BR)CES, N-Channel, CASE SEMIX 3S, 18 PIN