#TOSHIBA, #SG2000R22, #IGBT_Module, #IGBT, SG2000R22 Silicon Controlled Rectifier, 700 A, 1300 V, GATE TURN-OFF SCR; SG2000R22
Manufacturer Part Number: SG2000R22Part Life Cycle Code: ObsoleteIhs Manufacturer: Toshiba CORPPackage Description: DISK BUTTON, O-CEDB-N2HTS Code: 8541.30.00.80Manufacturer: Toshiba America electronic ComponentsRisk Rank: 5.7Additional Feature: PEAK TURN-OFF CURRENT IS 2000ACircuit Commutated Turn-off Time-Nom: 23 µsConfiguration: SINGLECritical Rate of Rise of Off-State Voltage-Min: 500 V/usDC Gate Trigger Current-Max: 2500 mADC Gate Trigger Voltage-Max: 1.2 VJESD-30 Code: O-CEDB-N2Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONQualification Status: Not QualifiedRMS On-state Current-Max: 700 ARepetitive Peak Off-state Leakage Current-Max: 50000 µARepetitive Peak Off-state Voltage: 1300 VRepetitive Peak Reverse Voltage: 15 VSurface Mount: YESTerminal Form: NO LEADTerminal Position: ENDTrigger Device Type: GATE TURN-OFF SCR Silicon Controlled Rectifier, 700 A, 1300 V, GATE TURN-OFF SCR