#TOSHIBA, #SG2700W22, #IGBT_Module, #IGBT, SG2700W22 Silicon Controlled Rectifier, 800 A, 1800 V, GATE TURN-OFF SCR; SG2700W22
Manufacturer Part Number: SG2700W22Part Life Cycle Code: ObsoleteIhs Manufacturer: Toshiba CORPPackage Description: DISK BUTTON, O-CEDB-N2HTS Code: 8541.30.00.80Manufacturer: Toshiba America Electronic ComponentsRisk Rank: 5.82Additional Feature: PEAK TURN-OFF CURRENT IS 2700ACircuit Commutated Turn-off Time-Nom: 25 µsConfiguration: SINGLECritical Rate of Rise of Off-State Voltage-Min: 500 V/usDC Gate Trigger Current-Max: 3500 mADC Gate Trigger Voltage-Max: 1.2 VJESD-30 Code: O-CEDB-N2Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONQualification Status: Not QualifiedRMS On-state Current-Max: 800 ARepetitive Peak Off-state Leakage Current-Max: 60000 µARepetitive Peak Off-state Voltage: 1800 VRepetitive Peak Reverse Voltage: 15 VSurface Mount: YESTerminal Form: NO LEADTerminal Position: ENDTrigger Device Type: GATE TURN-OFF SCR Silicon Controlled Rectifier, 800 A, 1800 V, GATE TURN-OFF SCR