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Infineon Technologies SGW30N60 IGBT Module

SGW30N60

#Infineon Technologies, #SGW30N60, #IGBT_Module, #IGBT, SGW30N60 Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN;

· Categories: IGBT Module
· Manufacturer: Infineon Technologies
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1217
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SGW30N60 Specification

Sell SGW30N60, #Infineon Technologies #SGW30N60 Stock, SGW30N60 Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN; SGW30N60, #IGBT_Module, #IGBT, #SGW30N60
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/sgw30n60.html

Manufacturer Part Number: SGW30N60Pbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: TO-247ACPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.13Additional Feature: LOW CONDUCTION LOSSCase Connection: COLLECTORCollector Current-Max (IC): 41 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLEFall Time-Max (tf): 70 nsGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-247ACJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 250 WQualification Status: Not QualifiedRise Time-Max (tr): 58 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN

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