Vishay Siliconix SI1988DH-T1-E3 IGBT Module

Manufacturer Part Number: SI1988DH-T1-E3Pbfree Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPart Package Code: SC-70Package Description: SMALL OUTLINE, R-PDSO-G6Pin Count: 6ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.83Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 20 VDrain Current-Max (Abs) (ID): 1.3 ADrain Current-Max (ID): 1.3 ADrain-source On Resistance-Max: 0.168 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1.25 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: MATTE TINTerminal Form: GULL WINGTerminal Position: DUALTime Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R